MIG75Q6CSB1X 2004-10-01 1/10 mitsubishi semiconductor MIG75Q6CSB1X (1200v/75a 6in1) high power switching applications motor control applications ? integrates inverter and control circuits (igbt drive units, protection units for short-circuit current, over current, under voltage and over temperature) in one package. ? the electrodes are isolated from case. ? v ce (sat) = 2.2 v (typ.) ? ul recognized: file no. e87989 equivalent circuit 1. v d (u) 2. fo (u) 3. in (u) 4. gnd (u) 5. v d (v) 6. fo (v) 7. in (v) 8. gnd (v) 9. v d (w) 10. fo (w) 11. in (w) 12. gnd (w) 13. v d (l) 14. fo (l) 15. open 16. open 17. in (x) 18. in (y) 19. in (z) 20. gnd (l) gnd in fo v d v s out gnd gnd in fo v d v s out gnd gnd in fo v d v s out gnd gnd in fo v d v s out gnd u v w b n p 16 19 20 18 17 14 13 15 4 3 2 1 8 7 6 5 12 11 10 9 gnd in fo v d v s out gnd gnd in fo v d v s out gnd
MIG75Q6CSB1X 2004-10-01 2/10 package dimensions 1. v d (u) 2. fo (u) 3. in (u) 4. gnd (u) 5. v d (v) 6. fo (v) 7. in (v) 8. gnd (v) 9. v d (w) 10. fo (w) 11. in (w) 12. gnd (w) 13. v d (l) 14. fo (l) 15. open 16. open 17. in (x) 18. in (y) 19. in (z) 20. gnd (l) unit: mm
MIG75Q6CSB1X 2004-10-01 3/10 signal terminal layout 1. v d (u) 2. fo (u) 3. in (u) 4. gnd (u) 5. v d (v) 6. fo (v) 7. in (v) 8. gnd (v) 9. v d (w) 10. fo (w) 11. in (w) 12. gnd (w) 13. v d (l) 14. fo (l) 15. open 16. open 17. in (x) 18. in (y) 19. in (z) 20. gnd (l) unit: mm
MIG75Q6CSB1X 2004-10-01 4/10 maximum ratings (t j = 25c) stage characteristic condition symbol ratings unit supply voltage p-n power terminal v cc 900 v collector-emitter voltage ? v ces 1200 v collector current tc = 25c, dc i c 75 a forward current tc = 25c, dc i f 75 a collector power dissipation tc = 25c p c 830 w inverter junction temperature ? t j 150 c control supply voltage v d -gnd terminal v d 20 v input voltage in-gnd terminal v in 20 v fault output voltage fo-gnd terminal v fo 20 v control fault output current fo sink current i fo 14 ma operating temperature ? tc ? 20 to 100 c storage temperature range ? t stg ? 40 to 125 c isolation voltage ac 1 minute v iso 2500 v screw torque (terminal) m4 ? 2 nm module screw torque (mounting) m5 ? 3 nm electrical characteristics 1. inverter stage characteristic symbol test condition min typ. max unit t j = 25c ? ? 1 collector cut-off current i cex v ce = 1200 v t j = 125c ? ? 10 ma t j = 25c ? 2.2 2.6 collector-emitter saturation voltage v ce (sat) v d = 15 v, i c = 75 a, v in = 15 v 0 v t j = 125c ? ? 3.0 v forward voltage v f i f = 75 a, t j = 25c ? 2.4 2.8 v t on ? 2.0 3.0 t c (on) ? 0.3 ? t rr ? 0.3 ? t off ? 1.5 2.5 switching time t c (off) v cc = 600 v, i c = 75 a, v d = 15 v, v in = 15 v ? 0 v, t j = 25c, inductive load (note 1) ? 0.4 ? s note 1: switching time test circuit and timing chart.
MIG75Q6CSB1X 2004-10-01 5/10 2. control stage (t j = 25c) characteristic symbol test condition min typ. max unit high side i d (h) ? 13 17 control circuit current low side i d (l) v d = 15 v ? 39 51 ma input-on signal voltage v in (on) v d = 15 v 1.4 1.6 1.8 v input-off signal voltage v in (off) v d = 15 v 2.2 2.5 2.8 v protection i fo (on) 8 10 12 fault output current normal i fo (off) v d = 15 v ? ? 0.1 ma over current protection trip level inverter oc v d = 15 v, t j < = ? ? a short-circuit current protection trip level inverter sc v d = 15 v, t j < = ? ? a over current cut-off time t off (oc) v d = 15 v ? 5 ? s trip level ot 110 118 125 over temperature protection reset level otr case temperature ? 98 ? c trip level uv 11.0 12.0 12.5 control supply under voltage protection reset level uvr ? 12.0 12.5 13.0 v fault output pulse width t fo v d = 15 v 1 2 3 ms 3. thermal resistance (tc = 25c) characteristic symbol test condition min typ. max unit inverter igbt stage ? ? 0.15 junction to case thermal resistance r th (j-c) inverter frd stage ? ? 0.35 c/w case to fin thermal resistance r th (c-f) compound is applied ? 0.017 ? c/w
MIG75Q6CSB1X 2004-10-01 6/10 switching time test circuit timing chart 2.5 v 1.6 v 15 v 10% 10% t off t c (o ff ) 10% 10% t o n t c (o n ) 90% i rr t rr 0 i rr 20% i rr input pulse v in waveform i c waveform v ce waveform 90% pg tlp559 (igm) intelligent power module v d in gnd out v s gnd u ( v, w ) p v cc v d in gnd out v s gnd i f = 16 ma n 15 v 0.1 ? ?
MIG75Q6CSB1X 2004-10-01 7/10 4. recommended conditions for application characteristic symbol test condition min typ. max unit supply voltage v cc p-n power terminal ? 600 800 v control supply voltage v d v d -gnd signal terminal 13.5 15 16.5 v carrier frequency fc pwm control ? ? 20 khz dead time tdead switching time test circuit (see page.6) (note 2) 3 ? ? s note 2: the table lists dead time requirements for the module input, excluding photocoupler delays. when specifying dead time requirements for the photocoupler input, please add photocoupler delays to the dead time given above. dead time timing chart t dead 15 v v in waveform v in waveform 0 15 v 0 t dead
MIG75Q6CSB1X 2004-10-01 8/10 i c ? v ce i c ? v ce switching time ? i c switching time ? i c i f ? v f trr, irr ? i f collector-emitter voltage v ce (v) collector-emitter voltage v ce (v) collector current i c (a) collector current i c (a) forward voltage v f (v) forward current i f (a) collector current i c (a) collector current i c (a) switching time ( s) switching time ( s) peak reverse recovery current irr (a) reverse recovery time trr ( 10 ns) forward current i f (a) 150 0 0 5 2 50 100 1 3 4 v d = 17 v v d = 13 v v d = 15 v common emitter t j = 25c 150 0 05 2 50 100 13 4 v d = 17 v v d = 13 v v d = 15 v common emitter t j = 125c 0 10 1 0.3 0.1 0.03 0.01 3 20 60 80 10 40 70 30 50 t j = 25c v cc = 600 v v d = 15 v l-load t on t off t c ( off ) t c ( on ) 0 10 1 0.3 0.1 0.03 0.01 3 20 60 80 10 40 70 30 50 t j = 125c v cc = 600 v v d = 15 v l-load t on t off t c ( off ) t c ( on ) 150 0 0 100 5 2 1 3 4 50 common cathode : t j = 25c : t j = 125c 0 100 3 10 5 3 1 5 20 60 80 10 40 70 30 50 common cathode : t j = 25c : t j = 125c irr trr
MIG75Q6CSB1X 2004-10-01 9/10 oc ? tc i d (h) ? fc i d (l) ? fc reverse bias soa r th (t) ? tw inverter stage case temperature tc (c) carrier frequency fc (khz) carrier frequency fc (khz) collector-emitter voltage v ce (v) pulse width tw (s) high side control circuit current i d (h) (ma) over current protection trip level oc (a) collector current i c (a) low side control circuit current i d (l) (ma) transient thermal resistance r th (t) /(c/w) 0 25 25 0 v d = 15 v 5 10 15 20 5 10 15 20 120 100 60 20 0 140 1400 0 200 400 600 800 1000 1200 40 80 t j < = = 15v oc 0.01 10 10 0.001 0.01 0.1 1 0.1 1 diode stage transistor stage tc = 25c 150 0 v d = 15 v inverter stage 25 50 75 100 125 0 200 150 100 50 0 80 25 0 20 40 60 5 10 15 20 v d = 15 v
MIG75Q6CSB1X 2004-10-01 10/10 turn on loss ? i c turn off loss ? i c collector current i c (a) collector current i c (a) turn off loss eoff (mj) turn on loss eon (mj) 0 100 10 1 0 80 v cc = 600 v v d = 15 v l-load : t j = 25c : t j = 125c 10 20 30 40 60 70 50 v cc = 600 v v d = 15 v l-load : t j = 25c : t j = 125c 10 20 30 40 60 70 50 0 100 10 1 0 80
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